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1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 irgp6690dpbf irgp6690d-epbf base part number package type standard pack orderable part number form quantity irgp6690dpbf to-247ac tube 25 irgp6690dpbf irgp6690d-epbf to-247ad t ube 25 irgp6690d-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 140 i c @ t c = 100c continuous collector current 90 i cm pulse collector current, v ge = 15v 225 i lm clamped inductive load current, v ge = 20v ? 300 i frm @ t c = 100c diode repetitive peak forward current ?? 45 i fm diode maximum forward current ? 300 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 483 w p d @ t c = 100c maximum power dissipation 241 t j operating junction and -40 to +175 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) a thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.31 c/w r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 r jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 2.10 v ces = 600v i c = 90a, t c =100c t sc 5s, t j(max) = 175c v ce(on) typ. = 1.65v @ i c = 75a applications ? welding ? h bridge converters features benefits low v ce(on) and switching losses high efficiency in a wide range of applications optimized diode for full bridge hard switch converters optimized for welding and h bridge converters square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability 5s short circuit soa enables short circuit protection scheme positive v ce (on) temperature coefficient excellent cu rrent sharing in parallel operation lead-free, rohs compliant environmentally friendly g c e gate collector emitter insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c e g c c e g c c irgp6690d-epbf to-247ad irgp6690dpbf to-247ac
irgp6690dpbf/irgp6690d-epbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ? v (br)ces / t j temperature coeff. of breakdown voltage ? 0.55 ? v/c v ge = 0v, i c = 3ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.65 1.95 i c = 75a, v ge = 15v, t j = 25c ? 2.10 ? i c = 75a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 2.1ma v ge(th) / t j threshold voltage te mperature coeff. ? -19 ? mv/c v ce = v ge , i c = 2.1ma (25c-175c) gfe forward transconductance ? 50 ? s v ce = 50v, i c = 75a, pw = 20s i ces collector-to-emitter leakage current ? 1.5 100 a v ge = 0v, v ce = 600v ? 1.4 ? v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 200 na v ge = 20v v fm ? 2.3 3.3 v i f = 18a ? 1.5 ? i f = 18a, t j = 175c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max units conditions q g total gate charge ? 140 ? nc i c = 75a q ge gate-to-emitter charge ? 40 ? v ge = 15v q gc gate-to-collector charge ? 60 ? v cc = 400v e on turn-on switching loss ? 2.4 ? mj i c = 75a, v cc = 400v, v ge =15v r g = 10 , l = 400h, t j = 25c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 2.2 ? e total total switching loss ? 4.6 ? t d(on) turn-on delay time ? 85 ? ns t r rise time ? 86 ? t d(off) turn-off delay time ? 222 ? t f fall time ? 53 ? e on turn-on switching loss ? 3.1 ? mj i c = 75a, v cc = 400v, v ge =15v r g = 10 , l = 400h, t j = 175c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 2.8 ? e total total switching loss ? 5.9 ? t d(on) turn-on delay time ? 67 ? ns t r rise time ? 92 ? t d(off) turn-off delay time ? 227 ? t f fall time ? 78 ? c ies input capacitance ? 4720 ? v ge = 0v c oes output capacitance ? 270 ? pf v cc = 30v c res reverse transfer capacitance ? 140 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 175c, i c = 300a full square v cc = 480v, vp 600v v ge = +20v to 0v scsoa short circuit safe operating area 5 ? ? s t j = 150c,v cc = 400v, vp 600v v ge = +15v to 0v erec reverse recovery energy of the diode ? 210 ? j t j = 175c t rr diode reverse recovery time ? 90 ? ns v cc = 400v, i f = 18a i rr peak reverse recovery current ? 26 ? a v ge = 15v, rg = 10 diode forward voltage drop ? 2.05 ? i c = 75a, v ge = 15v, t j = 150c v ma notes: ? v cc = 80% (v ces ), v ge = 20v, l = 400h, r g = 10 . ? r is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement. ? fsw =40khz, refer to figure 26.
irgp6690dpbf/irgp6690d-epbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 120 140 i c ( a ) 1 10 100 v ce (v) 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec fig. 2 - maximum dc collector current vs. case temperature 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 5 - reverse bias soa t j = 175c; v ge = 20v fig. 4 - forward soa t c = 25c; t j 175c; v ge = 15v 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 500 p t o t ( w ) 0.1 1 10 100 f , frequency ( khz ) 20 40 60 80 100 120 140 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 241w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 3 - power dissipation vs. case temperature i square wave: v cc diode as specified
irgp6690dpbf/irgp6690d-epbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v f (v) 0 50 100 150 200 250 300 i f ( a ) 175c 25c -40c 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 v c e ( v ) i ce = 37a i ce = 75a i ce = 150a fig. 9 - typ. diode forward voltage drop characteristics 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 v c e ( v ) i ce = 37a i ce = 75a i ce = 150a fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s fig. 10 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 25c 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s
irgp6690dpbf/irgp6690d-epbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 2 4 6 8 10 12 14 16 v ge (v) 0 50 100 150 200 250 300 i c e ( a ) t j = 25c t j = 175c 0 20 40 60 80 100 120 140 160 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 0 10 20 30 40 50 r g ( ) 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 15 - typ. switching time vs. i c t j = 175c; l = 400h; v ce = 400v, r g = 10 ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 175c; l = 400h; v ce = 400v, i ce = 75a; v ge = 15v 0 20406080100 rg ( ) 0 2 4 6 8 10 12 e n e r g y ( m j ) e off e on 0 20 40 60 80 100 120 140 160 i c (a) 0 2 4 6 8 10 12 14 e n e r g y ( m j ) e off e on fig. 14 - typ. energy loss vs. i c t j = 175c; l = 400h; v ce = 400v, r g = 10 ; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 175c; l = 400h; v ce = 400v, i ce = 75a; v ge = 15v 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 v c e ( v ) i ce = 37a i ce = 75a i ce = 150a fig. 12 - typical v ce vs. v ge t j = 175c
irgp6690dpbf/irgp6690d-epbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 0 200 400 600 800 1000 1200 di f /dt (a/s) 600 800 1000 1200 1400 1600 1800 q r r ( n c ) 10 22 100 47 9.0a 18a 36a 9 10111213141516 v ge (v) 5 10 15 20 25 30 t i m e ( s ) 100 200 300 400 500 600 c u r r e n t ( a ) t sc i sc fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c 5 10 15 20 25 30 35 40 i f (a) 0 50 100 150 200 250 300 e n e r g y ( j ) r g = 100 r g = 47 r g = 22 r g = 10 fig. 22 - typ. diode e rr vs. i f t j = 175c 0 200 400 600 800 1000 di f /dt (a/s) 5 10 15 20 25 30 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 18a; t j = 175c fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 25c 5 10 15 20 25 30 35 40 i f (a) 5 10 15 20 25 30 i r r ( a ) r g = 47 r g = 10 r g = 22 r g = 100 fig. 18 - typ. diode i rr vs. i f t j = 175c 0 20 40 60 80 100 r g ( ) 5 10 15 20 25 30 i r r ( a ) fig. 19 - typ. diode i rr vs. r g t j = 175c
irgp6690dpbf/irgp6690d-epbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 100 125 150 175 case temperature (c) 0 20 40 60 80 100 120 r e p e t i t i v e p e a k c u r r e n t ( a ) d=0.3 d=0.2 d=0.1 fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 120 140 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 25 - typical gate charge vs. v ge i ce = 75a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 27 - maximum transient thermal impedance, junction-to-case (igbt) fig. 26 - typical gate charge vs. v ge ri (c/w) i (sec) 0.0059807 0.00001295 0.0714021 0.00014130 0.1411822 0.00407600 0.0913779 0.02072000 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri c c 4 4 r 4 r 4
irgp6690dpbf/irgp6690d-epbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 fig. 28 - maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.156286 0.000117 0.556864 0.000252 0.866402 0.003387 0.521965 0.030298 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri c c 4 4 r 4 r 4
irgp6690dpbf/irgp6690d-epbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense
irgp6690dpbf/irgp6690d-epbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.6 -0.5 -0.4 -0.3 -0.2 i c e ( a ) v c e ( v ) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.6 -0.5 -0.4 -0.3 -0.2 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce t r eon loss -30 -25 -20 -15 -10 -5 0 5 10 15 20 -0.2 -0.1 0.0 0.1 i f (a) time (s) peak i rr t rr q rr -100 0 100 200 300 400 500 600 -100 0 100 200 300 400 500 600 -5.0 0.0 5.0 10.0 15.0 ice (a) vce (v) time (s) vce ice
irgp6690dpbf/irgp6690d-epbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
irgp6690dpbf/irgp6690d-epbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application.
irgp6690dpbf/irgp6690d-epbf 13 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. revision history date comments ? added i fm diode maximum forward current = 300a with the note ? on page 1. ? removed note ?? from switching losses test condition on page 2. 11/14/2014

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